Degree | Type | Year | Semester |
---|---|---|---|
2501922 Nanoscience and Nanotechnology | OB | 3 | 2 |
Basic knowledge is required of:
.- Theory of circuits (resolution of linear circuits with resistors, capacitors and inductances). It is highly recommended to have approved the subject "Electronic instrumentation".
.- Basic electrostatic (concepts of field, electrical potential, etc.). It is recommended to have approved the subject "Electricity, magnetism and Optics."
.- Mathematics (complex numbers, basic differential equations, etc.). It is recommended that you have passed the first- and second-year mathematical courses.
- Understanding and mastery of the physical principles of semiconductors, as well as the most common electronic and photonic devices and the technology of their manufacture.
- Relate the benefits of the devices, their operation in circuits and the technological manufacturing processes, through physical analytical models, numerical simulations at a physical level, compact models and circuit simulations.
Topic 1. Semiconductor physics and electronic transport
1.1 Charge and fields
1.2 Band diagrams and density of states
1.3 Electronic transport in semiconductors
Topic 2. PN junction diode
2.1 Electrostatic of the PN junction in equilibrium
2.2 PN Union out of equilibrium. Currents
2.3 Simple circuit applications: trimmers, rectifiers, etc.
Topic 3. Bipolar transistor
3.1 Types of transistors. Bands diagrams
3.2 Current-voltage curves.
3.3 Simple circuit applications: polarization, logic gates, amplifiers, etc.
Topic 4. MOSFET transistor
4.1 The MOSFET structure
4.2 Types of current-voltage transistors and curves
4.3 Simple circuit applications: logic gates, amplifiers, CMOS circuits
Topic 5. Photonic devices
5.1 Properties of light. Light-matter interaction
5.2 Light emitters: LEDs and LASERs
5.3 Light detectors: PIN and solar cells
Topic 6. From microelectronics to nanoelectronics
6.1 More Moore. Scaling from MOSFET. Short channel effects,...
6.2 Beyond CMOS: tunnel devices, quantum dots, single-electron devices, graphene, spintronics, molecular electronics
Guided activities:
Lectures: The teacher will explain the topics through (i) the
support of notes on screen that will be available to the student in advance
("virtual campus") and (ii) small exercises or complementary
explanations on the class board.
Problem seminars: The teacher will perform, or in some cases,
the students themselves, example problems.
Laboratory sessions: Before completing each practical
session, the student will have to prepare it and deliver at the beginning of
the session the corresponding report (in English). At the end of the internship
session, the student will deliver another report (in English) during the
session.
Supervised activities:
Tutorials: Outside normal class, the student will be able to
require the explanations of the professors of theory, problems or practices for
any doubt. The use of this didactic resource is recommended to the student.
Autonomous activities:
Study: An independent study of each subject of the subject by
the student is necessary.
Resolution of class problems: It is highly recommended that
the student try to do the exercises in advance.
Resolution of guided problems: in order to follow the
continuous assessment, it is necessary that the student be considered and solve
a problem (in English) of each topic. The originality of the problem will be
valued, the motivation of why this problem is raised and its correction in the
solution.
Preparation of the sessions of Laboratory: As mentioned, the
student must prepare a report prior to the performance of the practices.
Annotation: Within the schedule set by the centre or degree programme, 15 minutes of one class will be reserved for students to evaluate their lecturers and their courses or modules through questionnaires.
Title | Hours | ECTS | Learning Outcomes |
---|---|---|---|
Type: Directed | |||
Laboratory sessions | 15 | 0.6 | 19, 3, 12, 14, 24, 21, 16, 18, 30, 25, 26, 13, 27, 5, 20, 31, 32 |
Lectures | 20 | 0.8 | 11, 7, 9, 8, 10, 12, 17, 18, 31 |
Problem seminar | 10 | 0.4 | 6, 3, 11, 7, 9, 8, 10, 17, 25, 26, 28 |
Type: Supervised | |||
Tutorials | 5 | 0.2 | 2, 6, 3, 11, 7, 9, 8, 10, 24, 17, 25, 26, 29 |
Type: Autonomous | |||
Preparation of the sessions of Laboratory | 10 | 0.4 | 1, 19, 15, 23, 21, 18, 25, 26, 13, 31, 32 |
Resolution of problems | 10 | 0.4 | 2, 19, 11, 7, 9, 8, 10, 24, 21, 17, 22, 25, 26, 13, 27, 29, 28, 4, 20, 31 |
Study | 27 | 1.08 | 19, 23, 21, 18, 22, 26, 29, 28, 31 |
The subject will be compulsorily graded through two partials, the practices and guided problems according to the following percentages:
.- 1st Partial written Ewam: 35% of the NOTE
.- 2nd Partial written exam: 35% of the NOTE
.- Practices of each subject: 20% of the NOTE
.- Guided problems of each subject: 10% of the NOTE
All four parts must be approved with a minimum of 5.If you have a grade of less than 5 in one of the two partial exams, you can recover the failed partial exam in a final exam. To ask for a reevaluation the student must have been received a mark in activities that represent at least 2/3 of the global mark during the course.
.- Total written final exam: 70% of the NOTE
Title | Weighting | Hours | ECTS | Learning Outcomes |
---|---|---|---|---|
1st partial exam | 35% | 4 | 0.16 | 2, 11, 7, 9, 8, 24, 17, 13, 4 |
2nd partial exam | 35 | 4 | 0.16 | 11, 7, 8, 10, 17, 18, 13 |
Guided problems | 10% | 10 | 0.4 | 19, 24, 21, 18, 22, 25, 26, 13, 29, 28 |
Laboratory sessions for each topic | 20% | 10 | 0.4 | 1, 6, 3, 12, 14, 15, 23, 16, 30, 27, 5, 4, 20, 31, 32 |
Basic Bibliography:
Luis Prats Viñas y Josep Calderer Cardona, Dispositius electrònics i fotònics.
Fonaments. Edicions UPC, 2001
P. Horowitz and W. Hill The Art of Electronics,Cambridge Editorial Univ. Press (1989)
B.E.A. Salech and M.C. Theich Fundamentals of Photonics Editorial John Wiley & Sons
Additional bibliography for electronic devices:
MODULAR SERIES ON SOLID STATE DEVICES (Ed. Addison-Wesley):
R.F.Pierret, Semiconductor
fundamentals (1988) /
Fundamentos de semiconductores (1994)
Gerold W. Neudeck,. The
PN Junction Diode (1989) /
El diodo PN de unión (1993)
G.W.Neudeck, The
Bipolar Junction Transistor (1989) / El transistor bipolar de unión (1994)
R.F. Pierret, Field effect devices (1990) / Dispositivos
de efecto de campo (1994)
Additional bibliography for photonic devices:
J.Wilson Optoelectronics: an introduction.Editorial Prentice Hall
D.Wood. Optoelctronic
Semiconductor Devices. Editorial Prentice Hall.
S.D. Smith. Optoelectronic Devices.
Editorial Prentice Hall.
Additional Bibliography for nanoelectronic devices:
Rainer Waser Ed. Nanoelectronics and Information Technology.
Editorial WILEY-VCH.
WEB resources:
http://nanohub.org/
The software PSPICE for circuit simulation will be used